Molecular Dynamics Simulations of Atomic H Etching SiC Surface

نویسندگان

  • W. Sun
  • H. Liu
  • L. Lin
  • C. Zhao
  • X. Lu
  • P. He
  • F. Gou
چکیده

In this paper, molecular dynamics simulations were performed to study interactions between atomic H and SiC, silicon carbon surfaces were continuously bombarded by atomic H with different energies. The Tersoff-Brenner potentials were implemented. The simulation results show that with increasing incident energy, the retention rate of H atoms on the surface increases linerly. A large number of H atoms depositing on the surface results in the forming of Si,C and H layer on the surface and with increasing incident energy, H atoms penetrate deeper into the substrate, the thickness of the layer increases. The products H, H2 and SiH4 are dominant among the sputtering products, the number of H, H2 is much more than SiH4. And products are also different at different energies. © 2009 Published by Elsevier B.V. PACS: 52.65.Yy; 81.65.Cf; 52.77.Dq

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

A molecular dynamics simulation of water transport through C and SiC nanotubes: Application for desalination

In this work the conduction of ion-water solution through two discrete bundles of armchair carbon and silicon carbide nanotubes, as useful membranes for water desalination, is studied. In order that studies on different types of nanotubes be comparable, the chiral vectors of C and Si-C nanotubes are selected as (7,7) and (5,5), respectively, so that    a similar volume of fluid is investigated ...

متن کامل

A molecular dynamics simulation of water transport through C and SiC nanotubes: Application for desalination

In this work the conduction of ion-water solution through two discrete bundles of armchair carbon and silicon carbide nanotubes, as useful membranes for water desalination, is studied. In order that studies on different types of nanotubes be comparable, the chiral vectors of C and Si-C nanotubes are selected as (7,7) and (5,5), respectively, so that    a similar volume of fluid is investigated ...

متن کامل

Wetting behavior of water on silicon carbide polar surfaces.

Technically important wide band-gap semiconductors such as GaN, AlN, ZnO and SiC are crystallized in polar structures. Taking SiC as an example, we investigate the effect of surface polarity on the wetting behavior by water using experiments and molecular dynamic simulations. It is found that the contact angle (CA) of deionized water on the carbon-face (C-face) is significantly larger than that...

متن کامل

MD-Simulation of Duty Cycle and TaN Interlayer Effects on the Surface Properties of Ta Coatings Deposited by Pulsed-DC Plasma Assisted Chemical Vapor Deposition

In this work, molecular dynamics (MD) simulations were employed to investigate the effects of duty cycle changes and utilization of tantalum nitride interlayer on the surface roughness and adhesion of Ta coating deposited by pulsed-DC plasma assisted chemical vapor deposition. To examine the simulation results, some selected deposition conditions were experimentally implemented and characterize...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2013